Etching Mechanism of ZnO films using Inductively Coupled HBr/Ar Plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-02T13:15:15Z | - |
dc.date.available | 2021-09-02T13:15:15Z | - |
dc.date.created | 2021-04-22 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/76480 | - |
dc.publisher | ICMAP 2008 | - |
dc.title | Etching Mechanism of ZnO films using Inductively Coupled HBr/Ar Plasma | - |
dc.type | Conference | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.bibliographicCitation | 1st International Conference on Microelectronics and plasma Technology | - |
dc.relation.isPartOf | 1st International Conference on Microelectronics and plasma Technology | - |
dc.citation.title | 1st International Conference on Microelectronics and plasma Technology | - |
dc.citation.conferencePlace | KO | - |
dc.citation.conferenceDate | 2008-08-18 | - |
dc.type.rims | CONF | - |
dc.description.journalClass | 1 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.