Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)(2) Thin Film Solar Cell through Interface Engineering
DC Field | Value | Language |
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dc.contributor.author | Park, Gi Soon | - |
dc.contributor.author | Chu, Van Ben | - |
dc.contributor.author | Kim, Byoung Woo | - |
dc.contributor.author | Kim, Dong-Wook | - |
dc.contributor.author | Oh, Hyung-Suk | - |
dc.contributor.author | Hwang, Yun Jeong | - |
dc.contributor.author | Min, Byoung Koun | - |
dc.date.accessioned | 2021-09-02T13:39:18Z | - |
dc.date.available | 2021-09-02T13:39:18Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-03-28 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/76681 | - |
dc.description.abstract | An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)(2) (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | CHALCOPYRITE | - |
dc.subject | GROWTH | - |
dc.subject | CUINSE2 | - |
dc.subject | DEVICE | - |
dc.title | Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)(2) Thin Film Solar Cell through Interface Engineering | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Min, Byoung Koun | - |
dc.identifier.doi | 10.1021/acsami.8b00526 | - |
dc.identifier.scopusid | 2-s2.0-85044663184 | - |
dc.identifier.wosid | 000428972700003 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.12, pp.9894 - 9899 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 10 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 9894 | - |
dc.citation.endPage | 9899 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | CHALCOPYRITE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | CUINSE2 | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordAuthor | CIGS thin-film solar cell | - |
dc.subject.keywordAuthor | solution-process | - |
dc.subject.keywordAuthor | grain growth | - |
dc.subject.keywordAuthor | p-n junction | - |
dc.subject.keywordAuthor | interface engineering | - |
dc.subject.keywordAuthor | band alignment | - |
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