Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)(2) Thin Film Solar Cell through Interface Engineering
- Authors
- Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun
- Issue Date
- 28-3월-2018
- Publisher
- AMER CHEMICAL SOC
- Keywords
- CIGS thin-film solar cell; solution-process; grain growth; p-n junction; interface engineering; band alignment
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.10, no.12, pp.9894 - 9899
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 10
- Number
- 12
- Start Page
- 9894
- End Page
- 9899
- ISSN
- 1944-8244
- Abstract
- An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)(2) (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.