Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Kihyun | - |
dc.contributor.author | Yoon, Yongsu | - |
dc.contributor.author | James, Ralph B. | - |
dc.date.accessioned | 2021-09-02T16:00:39Z | - |
dc.date.available | 2021-09-02T16:00:39Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-02 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/77914 | - |
dc.description.abstract | Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZT samples with different resistivities, 2 x 10(4) (n-type), 2 x 10(6) (p-type), and 2 x 10(10) (p-type) Omega center dot cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. Theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | DETECTORS | - |
dc.subject | CDTE | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | LEVEL | - |
dc.title | Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Kihyun | - |
dc.identifier.doi | 10.3938/jkps.72.508 | - |
dc.identifier.scopusid | 2-s2.0-85042675496 | - |
dc.identifier.wosid | 000426358300006 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.72, no.4, pp.508 - 514 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 72 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 508 | - |
dc.citation.endPage | 514 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002321251 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | DETECTORS | - |
dc.subject.keywordPlus | CDTE | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | LEVEL | - |
dc.subject.keywordAuthor | CdZnTe | - |
dc.subject.keywordAuthor | Trap level | - |
dc.subject.keywordAuthor | MIS devices | - |
dc.subject.keywordAuthor | Capacitance measurement | - |
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