High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer
DC Field | Value | Language |
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dc.contributor.author | Oh, Jeong-Tak | - |
dc.contributor.author | Moon, Yong-Tae | - |
dc.contributor.author | Jang, Jung-Hun | - |
dc.contributor.author | Eum, Jung-Hyun | - |
dc.contributor.author | Sung, Youn-Joon | - |
dc.contributor.author | Lee, Sang Youl | - |
dc.contributor.author | Song, Jun-O | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-02T16:03:50Z | - |
dc.date.available | 2021-09-02T16:03:50Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-01-25 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/77938 | - |
dc.description.abstract | A combined buffer layer growth process was developed to grow crack-free GaN layers on 8-inch Si(111) wafers and so light-emitting diodes (LEDs). The combined buffer layer consisted of 2 nm-thick low-temperature (LT, 850 degrees C)-AlN, 8 nm-thick graded-temperature AlN, and 200 nm-thick high-temperature (HT, 1100 degrees C)-AlN layers. The X-ray diffraction (XRD) results showed that the LT-HT-AlN buffer layer exhibited better crystal quality than the HT-AlN buffer layer. The atomic force microscopy (AFM) images revealed that compared to the LT-HT-AlN buffer layer, the HT-AlN buffer layer had a rough surface with numerous bright spots, which correspond to N-polar AlN hillocks. Scanning electron microscopy (SEM) results showed many pits in the HT-AlN buffer layer. Transmission electron microscopy (TEM) results showed that the HT-AlN buffer layer contained about 1.3 nm-thick amorphous SixNy layer at the interface, while the LT-HT-AlN buffer layer showed a relatively smooth interface. It was further shown that using the LT-HT-AlN buffer layer, high-quality crack-free n-GaN layers (2.5 mm-thick) were grown on the 8-inch Si(111) substrate, which was confirmed by the XRD and cathodoluminescence results. Subsequently, packaged vertical LEDs (chip size: 1400 x 1400 mm(2)) grown on the LT-HT-AlN buffer layers showed higher light output power and chip yield than LEDs with the HT-AlN buffer layer. (C) 2017 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | INTERMEDIATE LAYER | - |
dc.subject | EPITAXIAL LAYERS | - |
dc.subject | THIN-FILM | - |
dc.subject | SI(111) | - |
dc.subject | INTERLAYERS | - |
dc.subject | DISLOCATIONS | - |
dc.subject | ALGAN | - |
dc.subject | FABRICATION | - |
dc.subject | CENTERS | - |
dc.title | High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.jallcom.2017.10.200 | - |
dc.identifier.scopusid | 2-s2.0-85032674836 | - |
dc.identifier.wosid | 000415931900077 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.732, pp.630 - 636 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 732 | - |
dc.citation.startPage | 630 | - |
dc.citation.endPage | 636 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | INTERMEDIATE LAYER | - |
dc.subject.keywordPlus | EPITAXIAL LAYERS | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | SI(111) | - |
dc.subject.keywordPlus | INTERLAYERS | - |
dc.subject.keywordPlus | DISLOCATIONS | - |
dc.subject.keywordPlus | ALGAN | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | CENTERS | - |
dc.subject.keywordAuthor | Light emitting diode | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Si substrate | - |
dc.subject.keywordAuthor | AlN buffer | - |
dc.subject.keywordAuthor | Electron microscopy | - |
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