High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer
- Authors
- Oh, Jeong-Tak; Moon, Yong-Tae; Jang, Jung-Hun; Eum, Jung-Hyun; Sung, Youn-Joon; Lee, Sang Youl; Song, Jun-O; Seong, Tae-Yeon
- Issue Date
- 25-1월-2018
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Light emitting diode; GaN; Si substrate; AlN buffer; Electron microscopy
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.732, pp.630 - 636
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 732
- Start Page
- 630
- End Page
- 636
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/77938
- DOI
- 10.1016/j.jallcom.2017.10.200
- ISSN
- 0925-8388
- Abstract
- A combined buffer layer growth process was developed to grow crack-free GaN layers on 8-inch Si(111) wafers and so light-emitting diodes (LEDs). The combined buffer layer consisted of 2 nm-thick low-temperature (LT, 850 degrees C)-AlN, 8 nm-thick graded-temperature AlN, and 200 nm-thick high-temperature (HT, 1100 degrees C)-AlN layers. The X-ray diffraction (XRD) results showed that the LT-HT-AlN buffer layer exhibited better crystal quality than the HT-AlN buffer layer. The atomic force microscopy (AFM) images revealed that compared to the LT-HT-AlN buffer layer, the HT-AlN buffer layer had a rough surface with numerous bright spots, which correspond to N-polar AlN hillocks. Scanning electron microscopy (SEM) results showed many pits in the HT-AlN buffer layer. Transmission electron microscopy (TEM) results showed that the HT-AlN buffer layer contained about 1.3 nm-thick amorphous SixNy layer at the interface, while the LT-HT-AlN buffer layer showed a relatively smooth interface. It was further shown that using the LT-HT-AlN buffer layer, high-quality crack-free n-GaN layers (2.5 mm-thick) were grown on the 8-inch Si(111) substrate, which was confirmed by the XRD and cathodoluminescence results. Subsequently, packaged vertical LEDs (chip size: 1400 x 1400 mm(2)) grown on the LT-HT-AlN buffer layers showed higher light output power and chip yield than LEDs with the HT-AlN buffer layer. (C) 2017 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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