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A very large perpendicular magnetic anisotropy in Pt/Co/MgO trilayers fabricated by controlling the MgO sputtering power and its thickness

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dc.contributor.authorGweon, Hyung Keun-
dc.contributor.authorYun, Seok Jin-
dc.contributor.authorLim, Sang Ho-
dc.date.accessioned2021-09-02T16:07:19Z-
dc.date.available2021-09-02T16:07:19Z-
dc.date.created2021-06-16-
dc.date.issued2018-01-19-
dc.identifier.issn2045-2322-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/77951-
dc.description.abstractThe perpendicular magnetic anisotropy (PMA) properties of Pt/Co/MgO trilayers are investigated as a function of the MgO sputtering power (P-MgO) and its thickness (t(MgO)), both of which are important parameters affecting the degree of oxygen interpenetration into Co during sputtering. A strong PMA is achieved at small values of P-MgO and t(MgO), where the oxygen interpenetration into Co is expected to be small. The range of oxygen interpenetration is relatively extended in such a way that it affects both the Pt/Co and Co/MgO interfaces. The PMA properties of as-deposited samples are improved by post-annealing for temperatures up to 400 degrees C examined in this study, probably due to the diffusion of the interpenetrated oxygen atoms toward the Co/MgO interface. In a structure of Pt/Co (0.6 nm)/MgO (2 nm), which is fabricated at P-MgO = 50 W and then annealed at 400 degrees C, a huge saturation field is achieved (over 40 kOe) indicating a very strong PMA. Between the two interfaces of Pt/Co and Co/MgO, the PMA is mainly due to the former in the as-deposited state, but the contribution of the latter increases with the increase in the annealing temperature.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherNATURE PUBLISHING GROUP-
dc.subjectTUNNEL-JUNCTIONS-
dc.subjectMULTILAYERS-
dc.subjectINPLANE-
dc.subjectMOMENTS-
dc.titleA very large perpendicular magnetic anisotropy in Pt/Co/MgO trilayers fabricated by controlling the MgO sputtering power and its thickness-
dc.typeArticle-
dc.contributor.affiliatedAuthorLim, Sang Ho-
dc.identifier.doi10.1038/s41598-018-19656-9-
dc.identifier.scopusid2-s2.0-85040833669-
dc.identifier.wosid000422891000096-
dc.identifier.bibliographicCitationSCIENTIFIC REPORTS, v.8-
dc.relation.isPartOfSCIENTIFIC REPORTS-
dc.citation.titleSCIENTIFIC REPORTS-
dc.citation.volume8-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalWebOfScienceCategoryMultidisciplinary Sciences-
dc.subject.keywordPlusTUNNEL-JUNCTIONS-
dc.subject.keywordPlusMULTILAYERS-
dc.subject.keywordPlusINPLANE-
dc.subject.keywordPlusMOMENTS-
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