Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters

Abstract

In this study, we investigate threshold voltage (V-TH) variability of metal-oxide semiconductor field-effect transistors induced by random dopant fluctuation (RDF). Our simulation work demonstrates not only the influence of the implantation parameters such as its dose, tilt angle, energy, and rotation angle on the RDF-induced V-TH variability, but also the solution to reduce the effect of this variability. By adjusting the ion implantation parameters, the 3 sigma (V-TH) is reduced from 43.8 mV to 28.9 mV. This 34% reduction is significant, considering that our technique is very cost effective and facilitates easy fabrication, increasing availability. (C) 2017 Elsevier Ltd. All rights reserved.