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Memory characteristics of p-type Si nanowire - Au nanoparticle nano floating gate memory device
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sangsig | - |
| dc.date.accessioned | 2021-09-02T18:56:24Z | - |
| dc.date.available | 2021-09-02T18:56:24Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/79589 | - |
| dc.publisher | The Japan Society of Applied Physics | - |
| dc.title | Memory characteristics of p-type Si nanowire - Au nanoparticle nano floating gate memory device | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
| dc.identifier.bibliographicCitation | 2008 International Microprocesses and Nanotechnology Conference | - |
| dc.relation.isPartOf | 2008 International Microprocesses and Nanotechnology Conference | - |
| dc.citation.title | 2008 International Microprocesses and Nanotechnology Conference | - |
| dc.citation.conferencePlace | JA | - |
| dc.citation.conferencePlace | Fukuoka | - |
| dc.citation.conferenceDate | 2008-10-27 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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Collections - College of Engineering > School of Electrical Engineering > 2. Conference Papers
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