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Rectifying characteristics of pn-junction composed of a single n-type ZnO nanowire and a p-type layer made of sintered HgTe nanoparticles
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sangsig | - |
| dc.date.accessioned | 2021-09-02T19:38:01Z | - |
| dc.date.available | 2021-09-02T19:38:01Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/79995 | - |
| dc.publisher | AIBAP, Portugal, University of Aveiro, Indian Institute of Technology | - |
| dc.title | Rectifying characteristics of pn-junction composed of a single n-type ZnO nanowire and a p-type layer made of sintered HgTe nanoparticles | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
| dc.identifier.bibliographicCitation | 2nd International conference on advanced nano materials | - |
| dc.relation.isPartOf | 2nd International conference on advanced nano materials | - |
| dc.citation.title | 2nd International conference on advanced nano materials | - |
| dc.citation.conferencePlace | PO | - |
| dc.citation.conferencePlace | Aveiro | - |
| dc.citation.conferenceDate | 2008-06-22 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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