Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sangyeop | - |
dc.contributor.author | Choi, Seonghoon | - |
dc.contributor.author | Bac, Seul-Ki | - |
dc.contributor.author | Lee, Kyung Jae | - |
dc.contributor.author | Chang, Jihoon | - |
dc.contributor.author | Choi, Suho | - |
dc.contributor.author | Chongthanaphisut, Phunvira | - |
dc.contributor.author | Lee, Sanghoon | - |
dc.contributor.author | Liu, Xinyu | - |
dc.contributor.author | Dobrowolska, M. | - |
dc.contributor.author | Furdyna, Jacek K. | - |
dc.date.accessioned | 2021-09-02T21:52:01Z | - |
dc.date.available | 2021-09-02T21:52:01Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-12-18 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/81156 | - |
dc.description.abstract | We report a method for accurate determination of the strength of the current-induced spin-orbit (SO) field in ferromagnetic GaMnAs films. The SO-field manifests itself in the form of a hysteresis between planar Hall resistances (PHR) measured with positive and negative currents as an applied magnetic field is rotated in the sample plane at constant field strength. The width of the hysteresis, which is related to the strength of the SO-field, is observed to change significantly for different values of the rotating external field strength. Since the SO field occurring at a given current is an intrinsic property of the crystal, such a field dependence of the hysteresis indicates that the width of the hysteresis measured with a single field strength is insufficient for determining the SO field. However, using a model based on magnetic free energy that includes the effects of magnetic anisotropy and the SO-field as developed in the present paper, we show that the SO field for a given current density can be accurately established by fitting to the experimentally observed dependence of transition angles of PHR measured with different applied field strengths. Using the known dependence of magnetic anisotropy of GaMnAs on temperature, we also show that this method applies reliably as the temperature varies. Published by AIP Publishing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | TORQUE | - |
dc.subject | DEVICES | - |
dc.subject | FILMS | - |
dc.title | Determination of current-induced spin-orbit effective magnetic field in GaMnAs ferromagnetic semiconductor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Sanghoon | - |
dc.identifier.doi | 10.1063/1.5012532 | - |
dc.identifier.scopusid | 2-s2.0-85040068564 | - |
dc.identifier.wosid | 000418648800022 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.111, no.25 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 111 | - |
dc.citation.number | 25 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TORQUE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | FILMS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.