Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

Abstract

The crystal grain size of CH3NH3PbI3 (MAPbI(3)) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from similar to 60 nm to similar to 600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI(3) OHP non-volatile resistive random access memory with similar to 60 nm crystal grain size exhibited >0.1 TB/in(2) storage capacity, >600 cycles endurance, >10(4) s data retention time, similar to 0.7 V set, and similar to-0.61 V re-set bias voltage.