Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory
- Authors
- Heo, Jin Hyuck; Shin, Dong Hee; Moon, Sang Hwa; Lee, Min Ho; Kim, Do Hun; Oh, Seol Hee; Jo, William; Im, Sang Hyuk
- Issue Date
- 29-11월-2017
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.7
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 7
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/81495
- DOI
- 10.1038/s41598-017-16805-4
- ISSN
- 2045-2322
- Abstract
- The crystal grain size of CH3NH3PbI3 (MAPbI(3)) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from similar to 60 nm to similar to 600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI(3) OHP non-volatile resistive random access memory with similar to 60 nm crystal grain size exhibited >0.1 TB/in(2) storage capacity, >600 cycles endurance, >10(4) s data retention time, similar to 0.7 V set, and similar to-0.61 V re-set bias voltage.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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