Influence of High-Energy Proton Irradiation on beta-Ga2O3 Nanobelt Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Yang, Gwangseok | - |
dc.contributor.author | Jang, Soohwan | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.contributor.author | Kim, Jihynn | - |
dc.date.accessioned | 2021-09-02T23:00:13Z | - |
dc.date.available | 2021-09-02T23:00:13Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2017-11-22 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/81519 | - |
dc.description.abstract | The robust radiation resistance of wide-band gap materials is advantageous for space applications, where the high-energy particle irradiation deteriorates the performance of electronic devices. We report on the effects of proton irradiation of beta-Ga2O3 nanobelts, whose energy band gap is similar to 4.85 eV at room temperature. Back-gated field-effect transistor (FET) based on exfoliated quasi-two-dimensional beta-Ga2O3 nanobelts were exposed to a 10 MeV proton beam. The proton-dose- and time-dependent characteristics of the radiation-damaged FETs were systematically analyzed. A 73% decrease in the field-effect mobility and a positive shift of the threshold voltage were observed after proton irradiation at a fluence of 2 x 10(15) cm(-2). Greater radiation-induced degradation occurs in the conductive channel of the beta-Ga2O3 nanobelt than at the contact between the metal and beta-Ga2O3. The on/off ratio of the exfoliated beta-Ga2O3 FETs was maintained even after proton doses up to 2 x 10(15) cm(-2). The radiation -induced damage in the beta-Ga2O3-based FETs was significantly recovered after rapid thermal annealing at 500 degrees C. The outstanding radiation durability of beta-Ga2O3 renders it a promising building block for space applications. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | GAN | - |
dc.subject | MOBILITY | - |
dc.subject | DIODES | - |
dc.subject | DAMAGE | - |
dc.subject | SI | - |
dc.title | Influence of High-Energy Proton Irradiation on beta-Ga2O3 Nanobelt Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihynn | - |
dc.identifier.doi | 10.1021/acsami.7b13881 | - |
dc.identifier.scopusid | 2-s2.0-85035052862 | - |
dc.identifier.wosid | 000416614600067 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.9, no.46, pp.40471 - 40476 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 9 | - |
dc.citation.number | 46 | - |
dc.citation.startPage | 40471 | - |
dc.citation.endPage | 40476 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | DAMAGE | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordAuthor | gallium oxide | - |
dc.subject.keywordAuthor | wide-band gap semiconductors | - |
dc.subject.keywordAuthor | proton irradiation | - |
dc.subject.keywordAuthor | two-dimensional materials | - |
dc.subject.keywordAuthor | thermal annealing | - |
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