Influence of High-Energy Proton Irradiation on beta-Ga2O3 Nanobelt Field-Effect Transistors
- Authors
- Yang, Gwangseok; Jang, Soohwan; Ren, Fan; Pearton, Stephen J.; Kim, Jihynn
- Issue Date
- 22-11월-2017
- Publisher
- AMER CHEMICAL SOC
- Keywords
- gallium oxide; wide-band gap semiconductors; proton irradiation; two-dimensional materials; thermal annealing
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.9, no.46, pp.40471 - 40476
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 9
- Number
- 46
- Start Page
- 40471
- End Page
- 40476
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/81519
- DOI
- 10.1021/acsami.7b13881
- ISSN
- 1944-8244
- Abstract
- The robust radiation resistance of wide-band gap materials is advantageous for space applications, where the high-energy particle irradiation deteriorates the performance of electronic devices. We report on the effects of proton irradiation of beta-Ga2O3 nanobelts, whose energy band gap is similar to 4.85 eV at room temperature. Back-gated field-effect transistor (FET) based on exfoliated quasi-two-dimensional beta-Ga2O3 nanobelts were exposed to a 10 MeV proton beam. The proton-dose- and time-dependent characteristics of the radiation-damaged FETs were systematically analyzed. A 73% decrease in the field-effect mobility and a positive shift of the threshold voltage were observed after proton irradiation at a fluence of 2 x 10(15) cm(-2). Greater radiation-induced degradation occurs in the conductive channel of the beta-Ga2O3 nanobelt than at the contact between the metal and beta-Ga2O3. The on/off ratio of the exfoliated beta-Ga2O3 FETs was maintained even after proton doses up to 2 x 10(15) cm(-2). The radiation -induced damage in the beta-Ga2O3-based FETs was significantly recovered after rapid thermal annealing at 500 degrees C. The outstanding radiation durability of beta-Ga2O3 renders it a promising building block for space applications.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.