Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes
- Authors
- Kim, Hwankyo; Kim, Dae-Hyun; Seong, Tae-Yeon
- Issue Date
- 11월-2017
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Cr/ITO; Electrode; Ultraviolet light-emitting diode; Transmittance
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.111, pp.872 - 877
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 111
- Start Page
- 872
- End Page
- 877
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/81745
- DOI
- 10.1016/j.spmi.2017.07.044
- ISSN
- 0749-6036
- Abstract
- We investigated the electrical performance of near ultraviolet (NUV) (390 nm) light-emitting diodes (LEDs) fabricated with various semi-transparent Cr/ITO n-type contacts. It was shown that after annealing at 400 degrees C, Cr/ITO (10 nm/40 nm) contact was ohmic with a specific contact resistance of 9.8 x 10(-4) Omega cm(2). NUV AlGaN-based LEDs fabricated with different Cr/ITO (6-12 nm/40 nm) electrodes exhibited forward-bias voltages of 3.27-3.30 V at an injection current of 20 mA, which are similar to that of reference LED with Cr/Ni/Au (20 nm/25 nm/200 nm) electrode (3.29 V). The LEDs with the Cr/ITO electrodes gave series resistances of 10.69-11.98 Omega, while the series resistance is 10.84 Ohm for the reference LED. The transmittance of the Cr/ITO samples significantly improved when annealed at 400 degrees C. The transmittance (25.8-45.2% at 390 nm) of the annealed samples decreased with increasing Cr layer thickness. The LEDs with the Cr/ITO electrodes exhibited higher light output power than reference LED (with Cr/Ni/Au electrode). In particular, the LED with the Cr/ITO (12 nm/40 nm) electrode showed 9.3% higher light output power at 100 mA than reference LED. Based on the X-ray photoemission spectroscopy (XPS) and electrical results, the ohmic formation mechanism is described and discussed. (C) 2017 Elsevier Ltd. All rights reserved.
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