645-GHz InP heterojunction bipolar transistor harmonic oscillator
DC Field | Value | Language |
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dc.contributor.author | Yun, J. | - |
dc.contributor.author | Kim, J. | - |
dc.contributor.author | Yoon, D. | - |
dc.contributor.author | Rieh, J. -S. | - |
dc.date.accessioned | 2021-09-03T00:01:59Z | - |
dc.date.available | 2021-09-03T00:01:59Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2017-10-26 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/81861 | - |
dc.description.abstract | 645-GHz signal generation with a harmonic oscillator based on a 250-nm InP heterojunction bipolar transistor technology is demonstrated. The oscillator is based on the common-base cross-coupled topology, generating a second harmonic signal through the push-push operation. The fabricated oscillator exhibits oscillation frequencies ranging from 561.5 to 645.1 GHz with bias variation. The measured peak output power is -17.4 dBm with a dc power dissipation of 49.3 mW (dc-to-RF efficiency of 0.04%). Additionally, terahertz imaging was successfully demonstrated with the developed oscillator employed as a signal source. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.title | 645-GHz InP heterojunction bipolar transistor harmonic oscillator | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Rieh, J. -S. | - |
dc.identifier.doi | 10.1049/el.2017.2754 | - |
dc.identifier.scopusid | 2-s2.0-85057721602 | - |
dc.identifier.wosid | 000413933200018 | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.53, no.22, pp.1475 - 1476 | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 53 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 1475 | - |
dc.citation.endPage | 1476 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | heterojunction bipolar transistors | - |
dc.subject.keywordAuthor | harmonic oscillators | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | millimetre wave oscillators | - |
dc.subject.keywordAuthor | heterojunction bipolar transistor harmonic oscillator | - |
dc.subject.keywordAuthor | common-base cross-coupled topology | - |
dc.subject.keywordAuthor | second harmonic signal | - |
dc.subject.keywordAuthor | push-push operation | - |
dc.subject.keywordAuthor | bias variation | - |
dc.subject.keywordAuthor | terahertz imaging | - |
dc.subject.keywordAuthor | signal source | - |
dc.subject.keywordAuthor | frequency 561 | - |
dc.subject.keywordAuthor | 5 GHz to 645 | - |
dc.subject.keywordAuthor | 1 GHz | - |
dc.subject.keywordAuthor | power 49 | - |
dc.subject.keywordAuthor | 3 mW | - |
dc.subject.keywordAuthor | InP | - |
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