Fermi-Level Unpinning Technique with Excellent Thermal Stability. for n-Type Germanium
DC Field | Value | Language |
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dc.contributor.author | Kim, Gwang-Sik | - |
dc.contributor.author | Kim, Seung-Hwan | - |
dc.contributor.author | Lee, Tae In | - |
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Choi, Changhwan | - |
dc.contributor.author | Shin, Changhwan | - |
dc.contributor.author | Shim, Joon Hyung | - |
dc.contributor.author | Kim, Jiyoung | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-03T00:06:59Z | - |
dc.date.available | 2021-09-03T00:06:59Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2017-10-18 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/81888 | - |
dc.description.abstract | A metal interlayer semiconductor (M I S) structure with excellent thermal stability and electrical performance for a nonalloyed contact scheme is developed, and considerations for designing thermally stable M I S structure are demonstrated on the basis of n-type germanium (Ge). A thermal annealing process makes M-I-S structures lose their Fermi-level unpinning and electron Schottky barrier height reduction effect in two mechanisms: (1) oxygen (O) diffusion from the interlayer to the contact metal due to high reactivity of a pure metal contact with O and (2) interdiffusion between the contact metal and semiconductor through grain boundaries of the interlayer. A pure metal contact such as titanium (Ti) provides very poor thermal stability due to its high reactivity with O. A structure with a tantalum nitride (TaN) metal contact and a titanium dioxide (TiO2) interlayer exhibits moderate thermal stability up to 400 degrees C because TaN has much lower reactivity with O than with Ti. However, the TiO2 interlayer cannot prevent the interdiffusion process because it is easily crystallized during thermal annealing and its grain boundaries act as diffusion path. A zinc oxide (ZnO) interlayer doped with group-III elements, such as an aluminum-doped ZnO (AZO) interlayer, acts as a good diffusion barrier due to its high crystallization temperature. A TaN/AZO/n-Ge structure provides excellent thermal stability above 500 degrees C as it can prevent both O diffusion and interdiffusion processes; hence, it exhibits Ohmic contact properties for all thermal annealing temperatures. This work shows that, to fabricate a thermally stable and low resistive M-I-S contact structure, the metal contact should have low reactivity with O and a low work function, and the interlayer should have a high crystallization temperature and a low conduction band offset to Ge. Furthermore, new insights are provided for designing thermally stable M I S contact schemes for any semiconductor material that suffers from the Fermi-level pinning problem. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | DIFFUSION BARRIER | - |
dc.subject | INTERFACIAL LAYER | - |
dc.subject | TANTALUM NITRIDE | - |
dc.subject | LOW-RESISTIVITY | - |
dc.subject | GE | - |
dc.subject | CONTACT | - |
dc.subject | METALLIZATION | - |
dc.subject | OXIDATION | - |
dc.subject | HEIGHT | - |
dc.subject | FILM | - |
dc.title | Fermi-Level Unpinning Technique with Excellent Thermal Stability. for n-Type Germanium | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shim, Joon Hyung | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1021/acsami.7b10346 | - |
dc.identifier.scopusid | 2-s2.0-85031697389 | - |
dc.identifier.wosid | 000413503700049 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.9, no.41, pp.35988 - 35997 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 9 | - |
dc.citation.number | 41 | - |
dc.citation.startPage | 35988 | - |
dc.citation.endPage | 35997 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | DIFFUSION BARRIER | - |
dc.subject.keywordPlus | INTERFACIAL LAYER | - |
dc.subject.keywordPlus | TANTALUM NITRIDE | - |
dc.subject.keywordPlus | LOW-RESISTIVITY | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | METALLIZATION | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | HEIGHT | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | metal-interlayer-semiconductor structure | - |
dc.subject.keywordAuthor | thermal stability | - |
dc.subject.keywordAuthor | Schottky barrier height | - |
dc.subject.keywordAuthor | tantalum nitride | - |
dc.subject.keywordAuthor | aluminum-doped zinc oxide | - |
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