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Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Seo, Yujin | - |
| dc.contributor.author | Kim, Choong-Ki | - |
| dc.contributor.author | Lee, Tae-In | - |
| dc.contributor.author | Hwang, Wan Sik | - |
| dc.contributor.author | Yu, Hyun-Yong | - |
| dc.contributor.author | Choi, Yang-Kyu | - |
| dc.contributor.author | Cho, Byung Jin | - |
| dc.date.accessioned | 2021-09-03T00:58:26Z | - |
| dc.date.available | 2021-09-03T00:58:26Z | - |
| dc.date.created | 2021-06-19 | - |
| dc.date.issued | 2017-10 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/82138 | - |
| dc.description.abstract | Aluminumoxynitride (AlON) is investigated as a germanium oxide (GeO) desorption barrier layer for Ge MOSFETs. Interface and border traps in the AlON/GeO2/Ge gate-stack are discussed in detail and compared with those in the Al2O3/GeO2/Ge gate-stack via MOS and MOSFET structures. Although the interface traps remain the same for AlON and Al2O3 in the gate stacks, the AlON gate-stack exhibits a reduced border trap, which results in improved reliability over the Al2O3 gate-stack. This is supported by both the charge-trappingand low-frequency noise analyses. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | LAYER | - |
| dc.subject | GE | - |
| dc.subject | DEPOSITION | - |
| dc.title | Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
| dc.identifier.doi | 10.1109/TED.2017.2741496 | - |
| dc.identifier.scopusid | 2-s2.0-85028708902 | - |
| dc.identifier.wosid | 000413728700004 | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.3998 - 4001 | - |
| dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.citation.volume | 64 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | 3998 | - |
| dc.citation.endPage | 4001 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | LAYER | - |
| dc.subject.keywordPlus | GE | - |
| dc.subject.keywordPlus | DEPOSITION | - |
| dc.subject.keywordAuthor | Aluminum oxynitride (AlON) | - |
| dc.subject.keywordAuthor | border trap | - |
| dc.subject.keywordAuthor | germanium | - |
| dc.subject.keywordAuthor | germanium oxide (GeO) | - |
| dc.subject.keywordAuthor | low-frequency noise (LFN) | - |
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