Electron irradiation of near-UV GaN/InGaN light emitting diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, In-Hwan | - |
dc.contributor.author | Polyakov, Alexander Y. | - |
dc.contributor.author | Smirnov, N. B. | - |
dc.contributor.author | Shchemerov, I. V. | - |
dc.contributor.author | Shmidt, N. M. | - |
dc.contributor.author | Tal'nishnih, N. A. | - |
dc.contributor.author | Shabunina, E. I. | - |
dc.contributor.author | Cho, Han-Su | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.contributor.author | Zinovyev, R. A. | - |
dc.contributor.author | Didenko, S. I. | - |
dc.contributor.author | Lagov, P. B. | - |
dc.contributor.author | Pearton, S. J. | - |
dc.date.accessioned | 2021-09-03T01:02:11Z | - |
dc.date.available | 2021-09-03T01:02:11Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2017-10 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/82166 | - |
dc.description.abstract | Irradiation with 6MeV electrons of near-UV (peak wavelength 385-390nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near E-c-0.8 and E-c-1eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1x10(16)cm(-2). The likely origin of the EL efficiency decrease is this increase in concentration of the E-c -0.8eV and E-c -1eV traps. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | PROTON IRRADIATION | - |
dc.subject | RADIATION-DAMAGE | - |
dc.subject | GAN DEVICES | - |
dc.subject | PERFORMANCE | - |
dc.subject | TRAPS | - |
dc.subject | GAAS | - |
dc.title | Electron irradiation of near-UV GaN/InGaN light emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, In-Hwan | - |
dc.identifier.doi | 10.1002/pssa.201700372 | - |
dc.identifier.scopusid | 2-s2.0-85031003775 | - |
dc.identifier.wosid | 000412823000044 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.214, no.10 | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 214 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | PROTON IRRADIATION | - |
dc.subject.keywordPlus | RADIATION-DAMAGE | - |
dc.subject.keywordPlus | GAN DEVICES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRAPS | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordAuthor | defects | - |
dc.subject.keywordAuthor | electroluminescence | - |
dc.subject.keywordAuthor | electron irradiation | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | LED | - |
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