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Electron irradiation of near-UV GaN/InGaN light emitting diodes
- Authors
- Lee, In-Hwan; Polyakov, Alexander Y.; Smirnov, N. B.; Shchemerov, I. V.; Shmidt, N. M.; Tal'nishnih, N. A.; Shabunina, E. I.; Cho, Han-Su; Hwang, Sung-Min; Zinovyev, R. A.; Didenko, S. I.; Lagov, P. B.; Pearton, S. J.
- Issue Date
- 10월-2017
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- defects; electroluminescence; electron irradiation; GaN; LED
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.214, no.10
- Indexed
- SCIE
SCOPUS
- Volume
- 214
- Number
- 10
- ISSN
- 1862-6300
- Abstract
- Irradiation with 6MeV electrons of near-UV (peak wavelength 385-390nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near E-c-0.8 and E-c-1eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1x10(16)cm(-2). The likely origin of the EL efficiency decrease is this increase in concentration of the E-c -0.8eV and E-c -1eV traps.
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