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Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

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dc.contributor.authorKim, Kyoung-Whan-
dc.contributor.authorLee, Kyung-Jin-
dc.contributor.authorSinova, Jairo-
dc.contributor.authorLee, Hyun-Woo-
dc.contributor.authorStiles, M. D.-
dc.date.accessioned2021-09-03T01:07:32Z-
dc.date.available2021-09-03T01:07:32Z-
dc.date.created2021-06-19-
dc.date.issued2017-09-26-
dc.identifier.issn2469-9950-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/82194-
dc.description.abstractWe use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a damping like component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER PHYSICAL SOC-
dc.subjectTOPOLOGICAL INSULATOR-
dc.subjectDOMAIN-WALLS-
dc.subjectMAGNITUDE-
dc.subjectTRANSPORT-
dc.subjectSYSTEMS-
dc.titleSpin-orbit torques from interfacial spin-orbit coupling for various interfaces-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Kyung-Jin-
dc.identifier.doi10.1103/PhysRevB.96.104438-
dc.identifier.scopusid2-s2.0-85029958385-
dc.identifier.wosid000411768300003-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.96, no.10-
dc.relation.isPartOfPHYSICAL REVIEW B-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume96-
dc.citation.number10-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusTOPOLOGICAL INSULATOR-
dc.subject.keywordPlusDOMAIN-WALLS-
dc.subject.keywordPlusMAGNITUDE-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusSYSTEMS-
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