Spin-orbit torques from interfacial spin-orbit coupling for various interfaces
- Authors
- Kim, Kyoung-Whan; Lee, Kyung-Jin; Sinova, Jairo; Lee, Hyun-Woo; Stiles, M. D.
- Issue Date
- 26-9월-2017
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW B, v.96, no.10
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL REVIEW B
- Volume
- 96
- Number
- 10
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/82194
- DOI
- 10.1103/PhysRevB.96.104438
- ISSN
- 2469-9950
- Abstract
- We use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a damping like component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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