Sub-60-mV / decade Negative Capacitance FinFET With Sub-10-nm Hafnium-Based Ferroelectric Capacitor
- Authors
- Ko, Eunah; Lee, Hyunjae; Goh, Youngin; Jeon, Sanghun; Shin, Changhwan
- Issue Date
- 9월-2017
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Negative capacitance; steep switching devices; Hafnium-based ferroelectric material; FinFET
- Citation
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.5, no.5, pp.306 - 309
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
- Volume
- 5
- Number
- 5
- Start Page
- 306
- End Page
- 309
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/82485
- DOI
- 10.1109/JEDS.2017.2731401
- ISSN
- 2168-6734
- Abstract
- The negative capacitance (NC) of ferroelectric materials has paved the way for achieving sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) field-effect transistors, by simply inserting a ferroelectric thin layer in the gate stack. However, in order to utilize the ferroelectric capacitor (as a breakthrough technique to overcome the Boltzmann limit of the device using thermionic emission process), the thickness of the ferroelectric layer should be scaled down to sub-10-nm for ease of integration with conventional CMOS logic devices. In this paper, we demonstrate an NC fin-shaped field-effect transistor (FinFET) with a 6-nm-thick HfZrO ferroelectric capacitor. The performance parameters of NC FinFET such as on-/off-state currents and subthreshold slope are compared with those of the conventional FinFET. Furthermore, a repetitive and reliable steep switching feature of the NC FinFET at various drain voltages is demonstrated.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.