Efficient Threshold Voltage Adjustment Technique by Dielectric Capping Effect on MoS2 Field-Effect Transistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, June | - |
dc.contributor.author | Kang, Dong-Ho | - |
dc.contributor.author | Kim, Jong-Kook | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-03T03:10:13Z | - |
dc.date.available | 2021-09-03T03:10:13Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/82610 | - |
dc.description.abstract | In this letter, we demonstrate an efficient threshold voltage (Vth) adjustment technique by depositing single or double dielectric layers on MoS2 field-effect transistors (FETs). We used Al2O3 and SiO2 as the capping layers on the MoS2 FET and observed different average Vth shifts of -2.39 and + 7.13 V, respectively. In order to further the controllability of the dielectric capping effect, the deposition of double dielectric layers, specifically Al2O3 on SiO2 and vice versa, was used for the first time. Consequently, the deposition of SiO2 on Al2O3 and Al2O3 on SiO2 shows an average Vth shifts of + 4.92 and + 4.02 V, respectively. The defect charges in the dielectric layer can induce band bending in the MoS2 interface and adjust Vth of the MoS2 FET. This result suggests a promising Vth adjustment technique for transition-metaldichalcogenides-basedFETs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | LAYER MOS2 | - |
dc.subject | MOBILITY | - |
dc.title | Efficient Threshold Voltage Adjustment Technique by Dielectric Capping Effect on MoS2 Field-Effect Transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/LED.2017.2720748 | - |
dc.identifier.scopusid | 2-s2.0-85022176006 | - |
dc.identifier.wosid | 000406429600045 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.38, no.8, pp.1172 - 1175 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 38 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1172 | - |
dc.citation.endPage | 1175 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | field effect transistor | - |
dc.subject.keywordAuthor | threshold voltage | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.