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The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks

Authors
Seo, YujinLee, Tae InYoon, Chang MoPark, Bo-EunHwang, Wan SikKim, HyungjunYu, Hyun-YongCho, Byung Jin
Issue Date
8월-2017
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Germanium; germanium oxide; metal-oxide-semiconductor (MOS) capacitor; yttrium oxide (Y2O3)
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3303 - 3307
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume
64
Number
8
Start Page
3303
End Page
3307
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/82709
DOI
10.1109/TED.2017.2710182
ISSN
0018-9383
Abstract
This paper investigates the impact of an atomic layer-deposited Y2O3 dielectric on the passivation of a GeO2 layer in GeO2-based Ge gate stacks. The equivalent oxide thickness scalability and thermal stability of the ultrathin Y2O3 layer are evaluated at different Y2O3 thicknesses and annealing conditions in detail. Experimental results show that a Y2O3 layer thickness of 1.0 nm is required to serve as a GeO2 passivation layerwhile retaining gate-stack performance at 400 C-o postdeposition annealing. However, at a higher annealing temperature of 500 C-o, the barrier property deteriorates and allows GeO desorption. The proposed gate-stack implies the applicability of a Y2O3 passivation method for further scaled GeO2-based Ge gate stacks.
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공과대학 (전기전자공학부)
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