Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics
DC Field | Value | Language |
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dc.contributor.author | Byeon, Hye-Hyeon | - |
dc.contributor.author | Kim, Kein | - |
dc.contributor.author | Kim, Woong | - |
dc.contributor.author | Yi, Hyunjung | - |
dc.date.accessioned | 2021-09-03T03:48:45Z | - |
dc.date.available | 2021-09-03T03:48:45Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-07-20 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/82801 | - |
dc.description.abstract | The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. The compatibility of the biologically assembled SWNT networks with ion gel dielectrics and the large capacitance of both the three-dimensional channel networks and the ion gel allowed an ultralow operation voltage. The all-SWNT-based FETs showed an I-on/I-off value of >10(2), an on-current density per channel width of 2.16 x 10(-4) A/mm at V-DS = 0.4 V, and a field-effect hole mobility of 1.12 cm(2)/V . s in addition to the low operation voltage of <-0.5 V. We envision that our work suggests a solution-based simple and low-cost approach to realizing all-carbon-based FETs for low voltage operation and flexible applications. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | CHARGE-TRANSFER | - |
dc.subject | CAPACITANCE | - |
dc.subject | CIRCUITS | - |
dc.title | Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Woong | - |
dc.identifier.doi | 10.1038/s41598-017-06000-w | - |
dc.identifier.scopusid | 2-s2.0-85025136988 | - |
dc.identifier.wosid | 000405907800035 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.7 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | CHARGE-TRANSFER | - |
dc.subject.keywordPlus | CAPACITANCE | - |
dc.subject.keywordPlus | CIRCUITS | - |
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