Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics
- Authors
- Byeon, Hye-Hyeon; Kim, Kein; Kim, Woong; Yi, Hyunjung
- Issue Date
- 20-7월-2017
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.7
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 7
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/82801
- DOI
- 10.1038/s41598-017-06000-w
- ISSN
- 2045-2322
- Abstract
- The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. The compatibility of the biologically assembled SWNT networks with ion gel dielectrics and the large capacitance of both the three-dimensional channel networks and the ion gel allowed an ultralow operation voltage. The all-SWNT-based FETs showed an I-on/I-off value of >10(2), an on-current density per channel width of 2.16 x 10(-4) A/mm at V-DS = 0.4 V, and a field-effect hole mobility of 1.12 cm(2)/V . s in addition to the low operation voltage of <-0.5 V. We envision that our work suggests a solution-based simple and low-cost approach to realizing all-carbon-based FETs for low voltage operation and flexible applications.
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