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Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers
- Authors
- Li, Tian; Kim, Sanghoon; Lee, Seung-Jae; Lee, Seo-Won; Koyama, Tomohiro; Chiba, Daichi; Moriyama, Takahiro; Lee, Kyung-Jin; Kim, Kab-Jin; Ono, Teruo
- Issue Date
- 7월-2017
- Publisher
- IOP PUBLISHING LTD
- Citation
- APPLIED PHYSICS EXPRESS, v.10, no.7
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 10
- Number
- 7
- ISSN
- 1882-0778
- Abstract
- The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR. (C) 2017 The Japan Society of Applied Physics
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