A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Iljin | - |
dc.contributor.author | Kim, Junghyun | - |
dc.contributor.author | Jeon, Sanggeun | - |
dc.date.accessioned | 2021-09-03T04:22:51Z | - |
dc.date.available | 2021-09-03T04:22:51Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-07 | - |
dc.identifier.issn | 2234-8409 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/82927 | - |
dc.description.abstract | This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency (f(max)) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST ELECTROMAGNETIC ENGINEERING & SCIENCE | - |
dc.title | A G-Band Frequency Doubler Using a Commercial 150 nm GaAs pHEMT Technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanggeun | - |
dc.identifier.doi | 10.5515/JKIEES.2017.17.3.147 | - |
dc.identifier.scopusid | 2-s2.0-85027161253 | - |
dc.identifier.wosid | 000411612600006 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE, v.17, no.3, pp.147 - 152 | - |
dc.relation.isPartOf | JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE | - |
dc.citation.title | JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE | - |
dc.citation.volume | 17 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 147 | - |
dc.citation.endPage | 152 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002248946 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | Frequency Doubler | - |
dc.subject.keywordAuthor | G-Band | - |
dc.subject.keywordAuthor | GaAs pHEMT | - |
dc.subject.keywordAuthor | Harmonic Matching | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.