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Improved hydrogenated amorphous silicon thin-film solar cells realized by replacing n-type Si layer with PFN interfacial layer

Authors
Ryu, Seung YoonSeo, Ji HoonHafeez, HassanSong, MyungkwanShin, Jun YoungKim, Dong HyunJung, Yong ChanKim, Chang-Su
Issue Date
6월-2017
Publisher
ELSEVIER SCIENCE SA
Keywords
A-Si:H thin-film solar cells; n-type dopant-free solar cells; PFN interfacial dipole layer
Citation
SYNTHETIC METALS, v.228, pp.91 - 98
Indexed
SCIE
SCOPUS
Journal Title
SYNTHETIC METALS
Volume
228
Start Page
91
End Page
98
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/83216
DOI
10.1016/j.synthmet.2017.04.014
ISSN
0379-6779
Abstract
Improvement in the device performance of hydrogenated amorphous silicon (a-Si:H) thin-film solar cells (TFSCs) without hazardous doping gases and complex processes has been a long-standing aim for many researchers. In this work, we replaced the n-type Si layer in an a-Si:H TFSC with an interfacial dipole layer of conjugated polymer electrolyte material, poly [(9,9-bis(3'-(N,N-dimethylamino) propyl)-2,7-fiuorene)-alt-2,7-(9,9-dioctylfluorene) (PFN), while keeping the conventional layer scheme. The addition of PFN eliminated the process complexity, improved the device performance, and generated a built-in potential (V-bi) across the p-type Si layer. The power conversion efficiency of the optimized device reached a maximum of 7.17%, which is significant when using a toxicant-free layer. The open-circuit voltage was improved to 0.80 V from 0.47 V in comparison to a reference a-Si:H TFSC without PFN, and the stability in light and dark conditions were greatly enhanced. The fill factor was increased from 0.45 to 0.59 because of the enhancement in shunt/series resistance. The improvement in device performance is mainly due to the creation of an interfacial dipole by the PFN layer, which generated the VIA across the p-type Si layer, decreased the potential barrier between the i-Si layer and aluminum cathode, and consequently reduced the defects resulting from the coating of the i-Si layer and enhanced electron extraction.
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