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Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

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dc.contributor.authorKwon, Junyoung-
dc.contributor.authorLee, Jong-Young-
dc.contributor.authorYu, Young-Jun-
dc.contributor.authorLee, Chul-Ho-
dc.contributor.authorCui, Xu-
dc.contributor.authorHoned, James-
dc.contributor.authorLee, Gwan-Hyoung-
dc.date.accessioned2021-09-03T06:08:50Z-
dc.date.available2021-09-03T06:08:50Z-
dc.date.created2021-06-16-
dc.date.issued2017-05-14-
dc.identifier.issn2040-3364-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/83456-
dc.description.abstract2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherROYAL SOC CHEMISTRY-
dc.subjectMOLYBDENUM-DISULFIDE-
dc.subjectLAYER MOS2-
dc.subjectLIGHT-EMISSION-
dc.subjectHIGH-MOBILITY-
dc.subjectMONOLAYER-
dc.subjectPERFORMANCE-
dc.subjectTRANSPORT-
dc.subjectGRAPHENE-
dc.subjectCONTACTS-
dc.subjectMECHANISM-
dc.titleThickness-dependent Schottky barrier height of MoS2 field-effect transistors-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Chul-Ho-
dc.identifier.doi10.1039/c7nr01501a-
dc.identifier.scopusid2-s2.0-85021828128-
dc.identifier.wosid000401146200047-
dc.identifier.bibliographicCitationNANOSCALE, v.9, no.18, pp.6151 - 6157-
dc.relation.isPartOfNANOSCALE-
dc.citation.titleNANOSCALE-
dc.citation.volume9-
dc.citation.number18-
dc.citation.startPage6151-
dc.citation.endPage6157-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusMOLYBDENUM-DISULFIDE-
dc.subject.keywordPlusLAYER MOS2-
dc.subject.keywordPlusLIGHT-EMISSION-
dc.subject.keywordPlusHIGH-MOBILITY-
dc.subject.keywordPlusMONOLAYER-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusCONTACTS-
dc.subject.keywordPlusMECHANISM-
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