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Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
- Authors
- Kwon, Junyoung; Lee, Jong-Young; Yu, Young-Jun; Lee, Chul-Ho; Cui, Xu; Honed, James; Lee, Gwan-Hyoung
- Issue Date
- 14-5월-2017
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.9, no.18, pp.6151 - 6157
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE
- Volume
- 9
- Number
- 18
- Start Page
- 6151
- End Page
- 6157
- ISSN
- 2040-3364
- Abstract
- 2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.
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