Manipulation of magnetization in GaMnAs films by spin-orbit-induced magnetic fields
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sangyeop | - |
dc.contributor.author | Yoo, Taehee | - |
dc.contributor.author | Bac, Seul-Ki | - |
dc.contributor.author | Choi, Seonghoon | - |
dc.contributor.author | Lee, Hakjoon | - |
dc.contributor.author | Lee, Sanghoon | - |
dc.contributor.author | Liu, X. | - |
dc.contributor.author | Furdyna, J. K. | - |
dc.contributor.author | Dobrowolska, M. | - |
dc.date.accessioned | 2021-09-03T06:34:13Z | - |
dc.date.available | 2021-09-03T06:34:13Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/83548 | - |
dc.description.abstract | We have investigated the effect of spin-orbit-induced (SOI) magnetic fields on magnetization switching in GaMnAs films. The sign of such SOI fields depends on the direction of the current flowing in the film, thus providing a handle for electrically manipulating magnetization in ferromagnetic GaMnAs films. Specifically, when an applied magnetic field is swept along the current direction, magnetization reversal occurs via rotations in opposite sense (i.e., clockwise (CW) or counterclockwise (CCW)) depending on the sign of the current, thus leading to opposite signs of the planar Hall resistance (PHR) measured on the film. The effect of SOI fields also manifests itself through hysteretic behavior of PHR for two opposite currents as a fixed magnetic field is rotated in the film plane. The width of the resulting hysteresis between two current directions then allows us to estimate the magnitude of the SOI field at current density of 1.0 x 10(5) A/cm(2) as similar to 1.2 Oe in our GaMnAs film. Such switching of magnetization between two magnetic easy axes induced by switching the sign of an applied current provides a means of electronically controlling the value of film resistance (in this case of PHR), a process that can be exploited in spintronic devices. (C) 2017 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Manipulation of magnetization in GaMnAs films by spin-orbit-induced magnetic fields | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Sanghoon | - |
dc.identifier.doi | 10.1016/j.cap.2017.03.004 | - |
dc.identifier.scopusid | 2-s2.0-85014623763 | - |
dc.identifier.wosid | 000400210800031 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.17, no.5, pp.801 - 805 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 17 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 801 | - |
dc.citation.endPage | 805 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002216633 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Spin orbit induced field | - |
dc.subject.keywordAuthor | Planar Hall resistance | - |
dc.subject.keywordAuthor | Ferromagnetic semiconductors | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.