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Metal Capping on Silicon Indium Zinc Oxide Semiconductor for High Performance Thin Film Transistors Processed at 150 degrees C

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dc.contributor.authorChoi, Jun Young-
dc.contributor.authorLee, Byeong Hyoen-
dc.contributor.authorKim, SangSig-
dc.contributor.authorLee, Sang Yeol-
dc.date.accessioned2021-09-03T06:40:50Z-
dc.date.available2021-09-03T06:40:50Z-
dc.date.created2021-06-16-
dc.date.issued2017-05-
dc.identifier.issn1533-4880-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/83586-
dc.description.abstractWe fabricated amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) by RF sputtering at the low processing temperature of 150 degrees C. Metal capping (MC) structure on TFTs showed enhanced performance. Even at low annealing temperature, the field-effect mobility (mu(FE)) showed 21.4 cm(2)/V s, and V-th shift was only 1.3 V. We attribute the enhancement of mobility to the metal capping layer, which effectively prevents the ambient effect of hydrogen and water vapor.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectFIELD-EFFECT MOBILITY-
dc.titleMetal Capping on Silicon Indium Zinc Oxide Semiconductor for High Performance Thin Film Transistors Processed at 150 degrees C-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, SangSig-
dc.identifier.doi10.1166/jnn.2017.14053-
dc.identifier.scopusid2-s2.0-85015408903-
dc.identifier.wosid000397855000092-
dc.identifier.bibliographicCitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3397 - 3400-
dc.relation.isPartOfJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.titleJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.volume17-
dc.citation.number5-
dc.citation.startPage3397-
dc.citation.endPage3400-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusFIELD-EFFECT MOBILITY-
dc.subject.keywordAuthorOxide Semiconductor-
dc.subject.keywordAuthorThin Film Transistors-
dc.subject.keywordAuthorSiInZnO-
dc.subject.keywordAuthorMetal Capping-
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