Unraveling the Issue of Ag Migration in Printable Source/Drain Electrodes Compatible with Versatile Solution-Processed Oxide Semiconductors for Printed Thin-Film Transistor Applications
- Authors
- Hong, Gyu Ri; Lee, Sun Sook; Park, Hye Jin; Jo, Yejin; Kim, Ju Young; Lee, Hoi Sung; Kang, Yun Chan; Ryu, Beyong-Hwan; Song, Aeran; Chung, Kwun-Bum; Choi, Youngmin; Jeong, Sunho
- Issue Date
- 26-4월-2017
- Publisher
- AMER CHEMICAL SOC
- Keywords
- migration; print; solution-process; transistor
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.9, no.16, pp.14058 - 14066
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 9
- Number
- 16
- Start Page
- 14058
- End Page
- 14066
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/83719
- DOI
- 10.1021/acsami.7b00524
- ISSN
- 1944-8244
- Abstract
- In recent decades, solution-processable, printable oxide thin-film transistors have garnered a tremendous amount of attention given their potential for use in low-cost, large-area electronics. However, printable metallic source/drain electrodes undergo undesirable electrical/thermal migration at an interfacial stack of the oxide semiconductor and metal electrode. In this study, we report oleic acid-capped Ag nanoparticles that effectively suppress the significant Ag migration and facilitate high field-effect mobilities in oxide transistors. The origin of the role of surface-capped Ag nanoparticles is clarified with comparative studies based on X-ray photoelectron spectroscopy and X-ray absorption spectroscopy.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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