Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors
- Authors
- Kim, Soo Jin; Jang, Mi; Yang, Hee Yeon; Cho, Jinhan; Lim, Ho Sun; Yang, Hoichang; Lim, Jung Ah
- Issue Date
- 5-Apr-2017
- Publisher
- AMER CHEMICAL SOC
- Keywords
- intensely pulsed white light; cross-linking; gate dielectric; organic thin-film transistors; flexible substrate
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.9, no.13, pp.11721 - 11731
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 9
- Number
- 13
- Start Page
- 11721
- End Page
- 11731
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/83775
- DOI
- 10.1021/acsami.6b14957
- ISSN
- 1944-8244
- Abstract
- We report the instantaneous pulsed-light cross linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole free surfaces and exhibit a low leakage current density, organic solvent, resistance; and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly unifirm capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.
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