D-Band Common-Base Amplifiers With Gain Boosting and Interstage Self-Matching in 0.18-mu m SiGe HBT Technology
DC Field | Value | Language |
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dc.contributor.author | Ko, Junho | - |
dc.contributor.author | Kim, Dongkyo | - |
dc.contributor.author | Jeon, Sanggeun | - |
dc.date.accessioned | 2021-09-03T09:10:03Z | - |
dc.date.available | 2021-09-03T09:10:03Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-03 | - |
dc.identifier.issn | 1549-7747 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/84345 | - |
dc.description.abstract | This paper presents two D-band amplifiers fabricated in a 0.18-mu m SiGe heterojunction bipolar transistor process. A single-ended amplifier employs a five-stage common-base topology, and a differential amplifier combines two of the single-ended chains. To overcome the limited available gain of the given technology at D-band, a gain-boosting technique based on positive feedback is adopted for each gain cell. In addition, the input and output impedances of the gain cell are conjugate-matched by adjusting the positive feedback; thus, no external components are needed for interstage matching. This improves the gain and bandwidth whileminimizing the chip size. The single-ended amplifier exhibits a measured gain of 7.5 dB at 123 GHz with a 3-dB bandwidth of 25 GHz. The differential amplifier shows a measured gain of 20.3 dB at 115 GHz with a 3-dB bandwidth of 13 GHz. The output power values of the two amplifiers are 2.6 and 6.7 dBm, respectively. The chip sizes are small at 0.22 and 0.40 mm(2), respectively. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | OUTPUT POWER | - |
dc.subject | COMMUNICATION | - |
dc.title | D-Band Common-Base Amplifiers With Gain Boosting and Interstage Self-Matching in 0.18-mu m SiGe HBT Technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanggeun | - |
dc.identifier.doi | 10.1109/TCSII.2016.2561963 | - |
dc.identifier.scopusid | 2-s2.0-85014596024 | - |
dc.identifier.wosid | 000396152300006 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.64, no.3, pp.254 - 258 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | - |
dc.citation.title | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | - |
dc.citation.volume | 64 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 254 | - |
dc.citation.endPage | 258 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | OUTPUT POWER | - |
dc.subject.keywordPlus | COMMUNICATION | - |
dc.subject.keywordAuthor | D-band amplifiers | - |
dc.subject.keywordAuthor | gain boosting | - |
dc.subject.keywordAuthor | interstage matching | - |
dc.subject.keywordAuthor | positive feedback | - |
dc.subject.keywordAuthor | SiGe heterojunction bipolar transistor (HBT) | - |
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