A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors
- Authors
- Hur, Ji-Hyun; Park, Junghak; Jeon, Sanghun
- Issue Date
- 15-2월-2017
- Publisher
- IOP PUBLISHING LTD
- Keywords
- MoS2; 2DEG; photosensor; persistent photocurrent; modeling; thin film transistor
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.50, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 50
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/84430
- DOI
- 10.1088/1361-6463/aa5000
- ISSN
- 0022-3727
- Abstract
- A model that universally describes the characteristics of photocurrent in molybdenum disulphide (MoS2) thin-film transistor (TFT) photosensors in both 'light on' and 'light off' conditions is presented for the first time. We considered possible material-property dependent carrier generation and recombination mechanisms in layered MoS2 channels with different numbers of layers. We propose that the recombination rates that are mainly composed of direct band-to-band recombination and interface trap-involved recombination change on changing the light condition and the number of layers. By comparing the experimental results, it is shown that the model performs well in describing the photocurrent behaviors of MoS2 TFT photosensors, including the photocurrent generation under illumination and a hugely long time persistent trend of the photocurrent decay in the dark condition, for a range of MoS2 layer numbers.
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Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
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