Steep switching characteristics of single-gated feedback field-effect transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Minsuk | - |
dc.contributor.author | Kim, Yoonjoong | - |
dc.contributor.author | Lim, Doohyeok | - |
dc.contributor.author | Woo, Sola | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-03T09:38:40Z | - |
dc.date.available | 2021-09-03T09:38:40Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-02-03 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/84471 | - |
dc.description.abstract | In this study, we propose newly designed feedback field-effect transistors that utilize the. positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec(-1), an on/off current ratio of approximately 10(11), and an on-current of approximately 10(-4) A at room temperature, demonstrating that the switching characteristics are superior to those. of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | NEGATIVE CAPACITANCE | - |
dc.subject | IMPACT-IONIZATION | - |
dc.subject | ENERGY-EFFICIENT | - |
dc.subject | OPERATION | - |
dc.subject | DEVICES | - |
dc.subject | FET | - |
dc.title | Steep switching characteristics of single-gated feedback field-effect transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1088/1361-6528/28/5/055205 | - |
dc.identifier.scopusid | 2-s2.0-85009060717 | - |
dc.identifier.wosid | 000412980800001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.28, no.5 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 28 | - |
dc.citation.number | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NEGATIVE CAPACITANCE | - |
dc.subject.keywordPlus | IMPACT-IONIZATION | - |
dc.subject.keywordPlus | ENERGY-EFFICIENT | - |
dc.subject.keywordPlus | OPERATION | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | FET | - |
dc.subject.keywordAuthor | feedback field-effect transistors | - |
dc.subject.keywordAuthor | steep switching characteristics | - |
dc.subject.keywordAuthor | subthreshold swing | - |
dc.subject.keywordAuthor | positive feedback loop | - |
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