A 280-GHz 10-dBm Signal Source Based on InP HBT Technology
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yun, Jongwon | - |
dc.contributor.author | Kim, Jungsoo | - |
dc.contributor.author | Rieh, Jae-Sung | - |
dc.date.accessioned | 2021-09-03T10:29:41Z | - |
dc.date.available | 2021-09-03T10:29:41Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017-02 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/84797 | - |
dc.description.abstract | A 280-GHz high-power signal source has been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. The fabricated signal source is composed of two in-phase locked common-base cross-coupled oscillators, the output of which is on-chip combined by a pair of rat-race couplers and a Wilkinson power combiner for enhanced output power. The developed signal source exhibits an oscillation frequency of 276.4 GHz and a phase noise of-89 dBc/Hz at 1 MHz offset. The output power of the signal source is measured to be 10 dBm (10 mW), while consuming a dc power of 196 mW (dc-to-RF efficiency of 5.1%). | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | POWER | - |
dc.subject | LOCKING | - |
dc.title | A 280-GHz 10-dBm Signal Source Based on InP HBT Technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Rieh, Jae-Sung | - |
dc.identifier.doi | 10.1109/LMWC.2016.2646928 | - |
dc.identifier.scopusid | 2-s2.0-85010223602 | - |
dc.identifier.wosid | 000395823800019 | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.27, no.2, pp.159 - 161 | - |
dc.relation.isPartOf | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 27 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 159 | - |
dc.citation.endPage | 161 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | LOCKING | - |
dc.subject.keywordAuthor | Heterojunction bipolar transistors | - |
dc.subject.keywordAuthor | injection locked oscillators | - |
dc.subject.keywordAuthor | power combining | - |
dc.subject.keywordAuthor | submillimeter wave integrated circuits. | - |
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