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Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Ju Hyun | - |
| dc.contributor.author | Jeon, Dong Su | - |
| dc.contributor.author | Kim, Tae Geun | - |
| dc.date.accessioned | 2021-09-03T10:57:44Z | - |
| dc.date.available | 2021-09-03T10:57:44Z | - |
| dc.date.created | 2021-06-16 | - |
| dc.date.issued | 2017-01-11 | - |
| dc.identifier.issn | 0022-3727 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/84929 | - |
| dc.description.abstract | In this paper, improved uniformity in the resistive switching (RS) characteristics of ZnO-based memristors using Ti sub-oxide layers (metallic TiOx, insulating TiOy) is reported. Compared with Pt/Ti/ZnO/Pt cells, more reliable and reproducible RS operation was observed in Pt/TiOx (or TiOy)/ZnO/Pt cells, particularly with insulating TiOy, because Ti sub-oxide layers play the role of oxygen reservoirs that help rupture the conducting filament. By comparison, Pt/TiOy/ZnO/Pt cells exhibited the best performance, with a large on/off ratio (similar to 10(5)) at a read voltage of 0.4 V, and highly stable low-and high-resistive state operation for 100 direct-current sweep cycles. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | IOP PUBLISHING LTD | - |
| dc.subject | BEHAVIOR | - |
| dc.subject | FILM | - |
| dc.title | Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
| dc.identifier.doi | 10.1088/1361-6463/50/1/015104 | - |
| dc.identifier.scopusid | 2-s2.0-85013413232 | - |
| dc.identifier.wosid | 000389050800001 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.50, no.1 | - |
| dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
| dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
| dc.citation.volume | 50 | - |
| dc.citation.number | 1 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | BEHAVIOR | - |
| dc.subject.keywordPlus | FILM | - |
| dc.subject.keywordAuthor | resistive switching | - |
| dc.subject.keywordAuthor | memristor | - |
| dc.subject.keywordAuthor | zince oxide | - |
| dc.subject.keywordAuthor | oxygen reservoir | - |
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