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Optical Signature of the Electron Injection in Ga(2)O3
- Authors
- Lee, Jonathan; Flitsiyan, Elena; Chernyak, Leonid; Ahn, Shihyun; Ren, Fan; Lin Yuna; Pearton, Stephen J.; Kim, Jihyun; Meyler, Boris; Salzman, Joseph
- Issue Date
- 2017
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.2, pp.Q3049 - Q3051
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- Volume
- 6
- Number
- 2
- Start Page
- Q3049
- End Page
- Q3051
- ISSN
- 2162-8769
- Abstract
- Electron injection-induced effect and its impact on the optical properties of beta-Ga2O3 ultra-wide bandgap semiconductor have not yet been studied. At the same time, this information is critical for beta-Ga2O3 applications in photovoltaic devices such as, photodetectors. In this work, we report the variable temperature cathodoluminescence studies of silicon-implanted beta-Ga2O3 and identify a possible mechanism for electron injection-induced luminescence decay observed in this material. (C) 2016 The Electrochemical Society.All rights reserved.
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