Electrical Characteristics of Vertical Ni/beta- Ga2O3 Schottky Barrier Diodes at High Temperatures
DC Field | Value | Language |
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dc.contributor.author | Oh, Sooyeoun | - |
dc.contributor.author | Yang, Gwangseok | - |
dc.contributor.author | Kimz, Jihyun | - |
dc.date.accessioned | 2021-09-03T14:59:51Z | - |
dc.date.available | 2021-09-03T14:59:51Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86310 | - |
dc.description.abstract | Vertical geometry beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated and the rectifying forward and reverse current-voltage characteristics were demonstrated at elevated temperatures for a freestanding beta-Ga2O3 material with an ultra-wide bandgap of similar to 4.9 eV. The breakdown voltage of the fabricated beta-Ga2O3 SBDs with a punch-through configuration was similar to 210 V without the edge-termination method. The electrical field and potential distributions were numerically simulated with a finite element method. The on-resistance was 2582 Omega center dot cm(2) at 25 degrees C, and decreased to 0.043 Omega center dot cm(2) at 225 degrees C. The figure-of-merit ( V-BR (2)/ R-on) was approximately 17.1W center dot cm(-2). The temperature-dependent Schottky barrier height and ideality factor were also determined. The developed beta-Ga2O3 SBDs with the punch-through structure exhibit great potential for high power and high temperature applications. (C) 2016 The Electrochemical Society All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | DEVICES | - |
dc.subject | ZNO | - |
dc.title | Electrical Characteristics of Vertical Ni/beta- Ga2O3 Schottky Barrier Diodes at High Temperatures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kimz, Jihyun | - |
dc.identifier.doi | 10.1149/2.0041702jss | - |
dc.identifier.scopusid | 2-s2.0-85011344546 | - |
dc.identifier.wosid | 000393985900014 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.2, pp.Q3022 - Q3025 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 6 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | Q3022 | - |
dc.citation.endPage | Q3025 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | ZNO | - |
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