Electrical Characteristics of Vertical Ni/beta- Ga2O3 Schottky Barrier Diodes at High Temperatures
- Authors
- Oh, Sooyeoun; Yang, Gwangseok; Kimz, Jihyun
- Issue Date
- 2017
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.2, pp.Q3022 - Q3025
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- Volume
- 6
- Number
- 2
- Start Page
- Q3022
- End Page
- Q3025
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/86310
- DOI
- 10.1149/2.0041702jss
- ISSN
- 2162-8769
- Abstract
- Vertical geometry beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated and the rectifying forward and reverse current-voltage characteristics were demonstrated at elevated temperatures for a freestanding beta-Ga2O3 material with an ultra-wide bandgap of similar to 4.9 eV. The breakdown voltage of the fabricated beta-Ga2O3 SBDs with a punch-through configuration was similar to 210 V without the edge-termination method. The electrical field and potential distributions were numerically simulated with a finite element method. The on-resistance was 2582 Omega center dot cm(2) at 25 degrees C, and decreased to 0.043 Omega center dot cm(2) at 225 degrees C. The figure-of-merit ( V-BR (2)/ R-on) was approximately 17.1W center dot cm(-2). The temperature-dependent Schottky barrier height and ideality factor were also determined. The developed beta-Ga2O3 SBDs with the punch-through structure exhibit great potential for high power and high temperature applications. (C) 2016 The Electrochemical Society All rights reserved.
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