Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated beta-Ga2O3 Micro-Flake
DC Field | Value | Language |
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dc.contributor.author | Oh, Sooyeoun | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Tadjer, Marko J. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-03T15:01:26Z | - |
dc.date.available | 2021-09-03T15:01:26Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86319 | - |
dc.description.abstract | Semiconductor materials ideal for solar-blind photodetectors (PDs) require an ultra-wide and direct bandgap to detect UV-C spectral wavelengths effectively. Using the mechanically exfoliated high-quality beta-Ga2O3 micro-flakes that have a direct bandgap of similar to 4.8 eV, we fabricated solar-blind PDs with a metal-semiconductor-metal (MSM) structure that can reduce the dark current, and then systemically investigated their photoresponse properties. The MSM devices with two Ni/Au Schottky contacts exhibited an extremely low dark current and high sensitivity (ratio of photocurrent to dark current > 10(3)) in UV-C wavelengths. In addition, they exhibited fast and stable on/off characteristics and high responsivity (1.68 A/W), with a superior rejection ratio when compared with the reported thin-film MSM solar-blind PDs, indicating the high potential of the quasi-two-dimensional beta-Ga2O3 for optoelectronic applications. (C) 2017 The Electrochemical Society. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | GALLIUM OXIDE-FILMS | - |
dc.subject | DEFECTS | - |
dc.title | Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated beta-Ga2O3 Micro-Flake | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1149/2.0231708jss | - |
dc.identifier.scopusid | 2-s2.0-85033717914 | - |
dc.identifier.wosid | 000409883900023 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.8, pp.Q79 - Q83 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 6 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | Q79 | - |
dc.citation.endPage | Q83 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GALLIUM OXIDE-FILMS | - |
dc.subject.keywordPlus | DEFECTS | - |
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