Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes
DC Field | Value | Language |
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dc.contributor.author | Lee, In-Hwan | - |
dc.contributor.author | Polyakov, A. Y. | - |
dc.contributor.author | Smirnov, N. B. | - |
dc.contributor.author | Shchemerov, I. V. | - |
dc.contributor.author | Chung, Tae-Hoon | - |
dc.contributor.author | Lagov, P. B. | - |
dc.contributor.author | Zinov'ev, R. A. | - |
dc.contributor.author | Pearton, S. J. | - |
dc.date.accessioned | 2021-09-03T15:04:30Z | - |
dc.date.available | 2021-09-03T15:04:30Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86337 | - |
dc.description.abstract | Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 x 10(15) cm(-2), electron irradiation increased the concentration of existing electron traps with levels at E-c-0.5 eV and introduced new electron traps with levels near E-c-1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the E-c-0.5 eV and E-c-1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near E-v+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination. (c) 2017 The Electrochemical Society. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | QUANTUM EFFICIENCY | - |
dc.subject | GAN DEVICES | - |
dc.subject | LUMINESCENCE | - |
dc.title | Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, In-Hwan | - |
dc.identifier.doi | 10.1149/2.0131710jss | - |
dc.identifier.scopusid | 2-s2.0-85033792210 | - |
dc.identifier.wosid | 000418367600017 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.10, pp.Q127 - Q131 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 6 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | Q127 | - |
dc.citation.endPage | Q131 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | QUANTUM EFFICIENCY | - |
dc.subject.keywordPlus | GAN DEVICES | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
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