Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes
- Authors
- Lee, In-Hwan; Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Chung, Tae-Hoon; Lagov, P. B.; Zinov'ev, R. A.; Pearton, S. J.
- Issue Date
- 2017
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.10, pp.Q127 - Q131
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- Volume
- 6
- Number
- 10
- Start Page
- Q127
- End Page
- Q131
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/86337
- DOI
- 10.1149/2.0131710jss
- ISSN
- 2162-8769
- Abstract
- Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 x 10(15) cm(-2), electron irradiation increased the concentration of existing electron traps with levels at E-c-0.5 eV and introduced new electron traps with levels near E-c-1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the E-c-0.5 eV and E-c-1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near E-v+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination. (c) 2017 The Electrochemical Society. All rights reserved.
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