Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zhao, Yu | - |
dc.contributor.author | Lee, Hyunjea | - |
dc.contributor.author | Choi, Woong | - |
dc.contributor.author | Fei, Weidong | - |
dc.contributor.author | Lee, Cheol Jin | - |
dc.date.accessioned | 2021-09-03T15:16:11Z | - |
dc.date.available | 2021-09-03T15:16:11Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/86405 | - |
dc.description.abstract | We report the synthesis of large-scale continuous MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition (CVD). As-grown thin films were composed of a continuous monolayer of MoSe2 and extended up to a millimeter scale. The CVD-grown monolayer MoSe2 films were uniform in thickness and highly crystalline with hexagonal crystal structures. Raman and photoluminescence spectra showed that CVD-grown monolayer MoSe2 films have similar vibrational and optical properties to those of mechanically exfoliated monolayer MoSe2. These results demonstrate that the CVD-grown monolayer MoSe2 films have reasonably high quality comparable to that of mechanically exfoliated monolayer MoSe2 flakes. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject | SINGLE-LAYER | - |
dc.subject | HIGH-MOBILITY | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | GROWTH | - |
dc.subject | TRANSISTORS | - |
dc.title | Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Cheol Jin | - |
dc.identifier.doi | 10.1039/c7ra03642f | - |
dc.identifier.scopusid | 2-s2.0-85021651800 | - |
dc.identifier.wosid | 000402999300017 | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.7, no.45, pp.27969 - 27973 | - |
dc.relation.isPartOf | RSC ADVANCES | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 7 | - |
dc.citation.number | 45 | - |
dc.citation.startPage | 27969 | - |
dc.citation.endPage | 27973 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | TRANSISTORS | - |
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