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Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition

Authors
Zhao, YuLee, HyunjeaChoi, WoongFei, WeidongLee, Cheol Jin
Issue Date
2017
Publisher
ROYAL SOC CHEMISTRY
Citation
RSC ADVANCES, v.7, no.45, pp.27969 - 27973
Indexed
SCIE
SCOPUS
Journal Title
RSC ADVANCES
Volume
7
Number
45
Start Page
27969
End Page
27973
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/86405
DOI
10.1039/c7ra03642f
ISSN
2046-2069
Abstract
We report the synthesis of large-scale continuous MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition (CVD). As-grown thin films were composed of a continuous monolayer of MoSe2 and extended up to a millimeter scale. The CVD-grown monolayer MoSe2 films were uniform in thickness and highly crystalline with hexagonal crystal structures. Raman and photoluminescence spectra showed that CVD-grown monolayer MoSe2 films have similar vibrational and optical properties to those of mechanically exfoliated monolayer MoSe2. These results demonstrate that the CVD-grown monolayer MoSe2 films have reasonably high quality comparable to that of mechanically exfoliated monolayer MoSe2 flakes.
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공과대학 (전기전자공학부)
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